Dependence of the dissolution characteristics of As₂S₃ as a photoresist on the condensation rate and evaporation temperatureMEDNIKAROV, B.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1989, Vol 7, Num 3, pp 561-564, issn 0734-211X, 4 p.Article

Observation of internal structure of a positive photoresist image using cross-sectional exposure methodUETANI, Y; HANABATA, M; FURUTA, A et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1989, Vol 7, Num 3, pp 569-571, issn 0734-211X, 3 p.Article

Submicrometer lithography using lensless high-efficiency holographic systemsCHEN, R. T; SADOVNIK, L; AYE, T. M et al.Optics letters. 1990, Vol 15, Num 15, pp 869-871, issn 0146-9592, 3 p.Article

Influence of lens aberrations on high resolution imaging on low reflectivity substratesMARTIN, B; ARTHUR, G; WALLACE, C et al.SPIE proceedings series. 1998, pp 372-383, isbn 0-8194-2777-2Conference Paper

Novolak design concept for high performance positive photoresistsHANABATA, M; OI, F; FURUTA, A et al.Polymer engineering and science. 1992, Vol 32, Num 20, pp 1494-1499, issn 0032-3888Conference Paper

Masking effect of photoactive compounds with various ballast molecules in novolak-naphthoquinonediazide positive photoresistsKISHIMURA, S; YAMAGUCHI, A; YAMADA, Y et al.Polymer engineering and science. 1992, Vol 32, Num 20, pp 1550-1555, issn 0032-3888Conference Paper

Photoresist microparabolas for beam steeringROTICH, S. K; SMITH, J. G; EVANS, A. G. R et al.SPIE proceedings series. 1998, pp 349-356, isbn 0-8194-2726-8Conference Paper

Prospects for using existing resists for evaluating 157-nm imaging systemsFEDYNYSHYN, Theodore H; KUNZ, Roderick R; DORAN, Scott P et al.SPIE proceedings series. 2000, pp 335-346, isbn 0-8194-3617-8Conference Paper

Characterization of diazonaphthoquinone-novolac resin-type positive photoresist for g-line and i-line exposure using water-soluble contrast enhancement materialsENDO, M; SASAGO, M; UENO, A et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1989, Vol 7, Num 3, pp 565-568, issn 0734-211X, 4 p.Article

Polymers for 157 nm photoresist applications : A progress reportPATTERSON, Kyle; YAMACHIKA, Mikio; CONLEY, Willard et al.SPIE proceedings series. 2000, pp 365-374, isbn 0-8194-3617-8Conference Paper

Acid formation from various sulfonates in a chemical amplification positive resistUENO, T; SCHLEGEL, L; HAYASHI, N et al.Polymer engineering and science. 1992, Vol 32, Num 20, pp 1511-1515, issn 0032-3888Conference Paper

Resolution characterization of a novel silicone-based positive photoresistTANAKA, A; BAN, H; IMAMURA, S et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1989, Vol 7, Num 3, pp 572-575, issn 0734-211X, 4 p.Article

Contrast enhancement of positive photoresist due to indenecarboxylic acidPAMPALONE, T. R; DI PIAZZA, J. J.Journal of the Electrochemical Society. 1988, Vol 135, Num 10, pp 2644-2646, issn 0013-4651Article

Process characterization of an aqueous developable photosensitive polyimide on a broadband stepperFLACK, Warren W; KULAS, Scott; FRANKLIN, Craig et al.SPIE proceedings series. 2000, pp 452-463, isbn 0-8194-3617-8Conference Paper

Fast etch anti-reflective coating for sub-0.35μm i-line microlithography applicationsWILLIAMS, P; XIE SHAO; LAMB, J et al.SPIE proceedings series. 1998, pp 518-525, isbn 0-8194-2777-2Conference Paper

A retrospective on 2-nitrobenzyl sulfonate photoacid generatorsHOULIHAN, F. M; NALAMASU, O; KOMETANI, J. M et al.The Journal of imaging science and technology. 1997, Vol 41, Num 1, pp 35-40, issn 1062-3701Conference Paper

Measurement of x-ray absorption spectra of photoresists using a silicon lithium detectorWELLS, G. M; TAYLOR, J. W; CERRINA, F et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 3252-3255, issn 1071-1023Conference Paper

Untersuchungen zur sensitometrischen Charakterisierung von Photoresist-Systemen = Caractérisation sensitométrique des systèmes photorésist = Investigations on sensitometric characterization of liquid photoresist systemsBÖTTCHER, H; FRANKE, U; FRITZ, T et al.Journal of information recording materials (1985). 1988, Vol 16, Num 4, pp 303-311, issn 0863-0453Article

0.35 μm rule device pattern fabrication using high absorption-type novolac photoresist in single layer deep ultraviolet lithography : surface image transfer for contact hole fabricationTOMO, Y; KASUGA, T; SAITO, M et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 2576-2580, issn 1071-1023Conference Paper

Photoresist etching in a hollow cathode reactorGROSS, M; HORWITZ, C. M.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 6, pp 1291-1296, issn 0734-211XArticle

An exact solution for the optical absorbance of thin filmsBABU, S. V; BAROUCH, E.Studies in applied mathematics (Cambridge). 1987, Vol 77, Num 2, pp 173-182, issn 0022-2526Article

Polymeric materials for semi-conductor processing: photolithographic materialsPETHRICK, R. A.Progress in rubber and plastics technology. 1986, Vol 2, Num 2, pp 1-9, issn 0266-7320Article

Tailored novolak resins for advanced photoresists by a two-step procedure : New insight into the molecular structure is achieved by coupling GPC and MALDI-TOF-MSREUTHER, Freimut; KRUEGER, Ralph-Peter; SCHULZ, Guenter et al.SPIE proceedings series. 2000, pp 464-471, isbn 0-8194-3617-8Conference Paper

Negative i-line photoresist for 0.5 μm and beyondCONLEY, W; GELORME, J.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 2570-2575, issn 1071-1023Conference Paper

Photopolymerization study of photoresists by ESR spectroscopy and ESR imagingDAHM, J; MACHO, V; MARESCH, G. G et al.Molecular physics (Print). 1991, Vol 74, Num 3, pp 591-598, issn 0026-8976Article